sot-23 plastic-encapsulate transistors A733 transistor (pnp) feature z collector-base voltage z complement to c945 maximum ratings(t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax unit collector-base breakdown voltage v (br) cbo i c = -5ua,i e =0 -60 v collector-emitter breakdown voltage v (br) ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v (br) ebo i e = -50ua, i c =0 -5 v collector cut-off current i cbo v cb = -60 v , i e =0 -0.1 ua emitter cut-off current i ebo v eb = -5 v , i c =0 -0.1 ua dc current gain h fe v ce = -6 v, i c = -1ma 120 475 collector-emitter saturation voltage v ce (sat) i c = -100ma, i b =- 10ma -0.18 -0.3 v base-emitter voltage v be(on) v ce =-6v,i c =-1.0ma -0.58 -0.62 -0.68 v transition frequency f t v ce =-6v,i c =-10ma 50 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mh z 4.5 7 pf noise figure nf v ce =-6v,i c =-0.3ma, rg=10k ? ,f=100h z 6 20 db classification of h fe rank l h range 120-220 220-475 marking cs so t -23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.1 -1 -10 -100 0 100 200 300 -1 -10 -100 -10 -100 -0.1 -1 -10 1 -1 -10 -100 200 0 25 50 75 100 125 150 0 50 100 150 200 250 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -8 -10 -0 -1 -2 -3 -4 -150 f t ?? i c h fe ?? common emitter v ce =-6v -3 -30 -0.3 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c -3 t a =25 -30 -300 -30 -0.3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =100 i c v cesat ?? -500 -150 -3 20 10 3 -3 -0.3 -20 cob cib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) 300 100 -3 -30 v ce =-6v t a =25 transition frequency f t (mhz) collector current i c (ma) t a A733 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? -150 v be i c ?? -30 -3 -0.3 t a =25 t a =100 common emitter v ce =-6v collector current i c (ma) base-emmiter voltage v be (v) -0.5 -30 -0.2 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 -150 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) -20ua -18ua -16ua -14ua -12ua -10ua -8ua -6ua -4ua i b =-2ua common emitter t a =25 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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